[F-7-4] Mechanism study of gate leakage current for AlGaN/GaN HEMT structure under high reverse bias by TSB model and TCAD simulation

T. Oishi¹、K. Hayashi¹、Y. Yamaguchi¹、H. Otsuka¹、K. Yamanaka¹、M. Nakayama¹、Y. Miyamoto² (1.Mitsubishi Electric Corp.、2.Tokyo Tech. , Japan)

https://doi.org/10.7567/SSDM.2012.F-7-4