High Performance Dual Gate Amorphous In-Ga-Zn-O Thin Film Transistor with Nanometer Dot-like Doping

2012 International Conference on Solid State Devices and Materials

Sep 25, 2012 - Sep 27, 2012
Kyoto International Conference Center, Kyoto, Japan

H. W. Zan¹, C. H. Liao¹, C. H. Li¹, C. C. Tsai¹, W. T. Chen², C. H. Hsu² (1.National Chiao Tung Univ., 2.E Ink Holdings Inc. , Taiwan)