[F-8-4] Amorphous indium zinc oxide thin film transistors with ultra-high saturation mobility using Sm2O3 as gate insulator
W. K. Lin1, J. W. Zheng2, S. T. Chang1, K. C. Liu2
(1.National Chung Hsing Univ., 2.Chang Gung Univ. , Taiwan)
https://doi.org/10.7567/SSDM.2012.F-8-4
