[F-8-4] Amorphous indium zinc oxide thin film transistors with ultra-high saturation mobility using Sm2O3 as gate insulator

W. K. Lin¹、J. W. Zheng²、S. T. Chang¹、K. C. Liu² (1.National Chung Hsing Univ.、2.Chang Gung Univ. , Taiwan)

https://doi.org/10.7567/SSDM.2012.F-8-4