[F-9-4] Roles of Unintentionally-doped channel on Carbon doped GaN for high performance AlGaN/GaN HFET

J. H. Shin¹、Y. S. Eum¹、J. M. Kim¹、K. C. Kim¹、T. Jang¹ (1.IGBT part, System IC R&D, LG Electronics , Korea)

https://doi.org/10.7567/SSDM.2012.F-9-4