[F-9-4] Roles of Unintentionally-doped channel on Carbon doped GaN for high performance AlGaN/GaN HFET
J. H. Shin1, Y. S. Eum1, J. M. Kim1, K. C. Kim1, T. Jang1
(1.IGBT part, System IC R&D, LG Electronics , Korea)
https://doi.org/10.7567/SSDM.2012.F-9-4
