[F-9-5] Damage-free Neutral Beam Etching for High-performance GaN HEMT Y. Tamura1,3, J. Ohta2,3, H. Fujioka2,3, S. Samukawa1,3 (1.Tohoku Univ., 2.The Univ. of Tokyo, 3.CREST , Japan) https://doi.org/10.7567/SSDM.2012.F-9-5