[F-9-5] Damage-free Neutral Beam Etching for High-performance GaN HEMT

Y. Tamura^1,3、J. Ohta^2,3、H. Fujioka^2,3、S. Samukawa^1,3 (1.Tohoku Univ.、2.The Univ. of Tokyo、3.CREST , Japan)

https://doi.org/10.7567/SSDM.2012.F-9-5