Floating Gate Memory with High-density Nanodot Array Formed Utilizing Ti-binding Dps

H. Kamitake; K. Ohara; M. Uenuma; B. Zheng; Y. Ishikawa; I. Yamashita; Y. Uraoka

doi:https://doi.org/10.7567/SSDM.2012.G-1-3

2012 International Conference on Solid State Devices and Materials

2012年9月25日〜 2012年9月27日
Kyoto International Conference Center, Kyoto, Japan

[G-1-3] Floating Gate Memory with High-density Nanodot Array Formed Utilizing Ti-binding Dps

H. Kamitake^1,2、K. Ohara¹、M. Uenuma^1,2、B. Zheng^1,2、Y. Ishikawa^1,2、I. Yamashita^1,2,3、Y. Uraoka^1,2 (1.Nara Inst. of Science and Tech.、2.CREST、3.ATRL, Panasonic Corporation , Japan)

https://doi.org/10.7567/SSDM.2012.G-1-3

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