Floating Gate Memory with High-density Nanodot Array Formed Utilizing Ti-binding Dps

H. Kamitake; K. Ohara; M. Uenuma; B. Zheng; Y. Ishikawa; I. Yamashita; Y. Uraoka

doi:https://doi.org/10.7567/SSDM.2012.G-1-3

2012 International Conference on Solid State Devices and Materials

Sep 25, 2012 - Sep 27, 2012
Kyoto International Conference Center, Kyoto, Japan

[G-1-3] Floating Gate Memory with High-density Nanodot Array Formed Utilizing Ti-binding Dps

H. Kamitake^1,2, K. Ohara¹, M. Uenuma^1,2, B. Zheng^1,2, Y. Ishikawa^1,2, I. Yamashita^1,2,3, Y. Uraoka^1,2 (1.Nara Inst. of Science and Tech., 2.CREST, 3.ATRL, Panasonic Corporation , Japan)

https://doi.org/10.7567/SSDM.2012.G-1-3

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