Improved resistive switching memory characteristics using higher Ge content in Gex(0.2-0.5)Se1-x solid-electrolytes

S. Maikap; S. Z. Rahaman; Y. Hsuan; C. S. Lai; H. Y. Lee; W. S. Chen; F. T. Chen; M. J. Kao; M. J. Tsai

doi:https://doi.org/10.7567/SSDM.2012.G-3-4

2012 International Conference on Solid State Devices and Materials

2012年9月25日〜 2012年9月27日
Kyoto International Conference Center, Kyoto, Japan

[G-3-4] Improved resistive switching memory characteristics using higher Ge content in Gex(0.2-0.5)Se1-x solid-electrolytes

S. Maikap¹、S. Z. Rahaman¹、Y. Hsuan¹、C. S. Lai¹、H. Y. Lee²、W. S. Chen²、F. T. Chen²、M. J. Kao²、M. J. Tsai² (1.Chang Gung Univ.、2.Indus. Tech. Res. Inst. , Taiwan)

https://doi.org/10.7567/SSDM.2012.G-3-4

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