Improved resistive switching memory characteristics using higher Ge content in Gex(0.2-0.5)Se1-x solid-electrolytes

S. Maikap; S. Z. Rahaman; Y. Hsuan; C. S. Lai; H. Y. Lee; W. S. Chen; F. T. Chen; M. J. Kao; M. J. Tsai

doi:https://doi.org/10.7567/SSDM.2012.G-3-4

2012 International Conference on Solid State Devices and Materials

Sep 25, 2012 - Sep 27, 2012
Kyoto International Conference Center, Kyoto, Japan

[G-3-4] Improved resistive switching memory characteristics using higher Ge content in Gex(0.2-0.5)Se1-x solid-electrolytes

S. Maikap¹, S. Z. Rahaman¹, Y. Hsuan¹, C. S. Lai¹, H. Y. Lee², W. S. Chen², F. T. Chen², M. J. Kao², M. J. Tsai² (1.Chang Gung Univ., 2.Indus. Tech. Res. Inst. , Taiwan)

https://doi.org/10.7567/SSDM.2012.G-3-4

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