[G-5-4L] Electrostatic tuning of charge velocity in a quantum Hall edge channel defined along the perimeter of a gate metal
R. Murata1, M. Hashisaka1, K. Muraki2, T. Fujisawa1
(1.Tokyo Tech., 2.NTT Basic Res. Lab. , Japan)
https://doi.org/10.7567/SSDM.2012.G-5-4L
