[H-1-1] Defects in Electron-Irradiated and Hydrogenated GaAsN Grown by Chemical Beam Epitaxy

B. Bouzazi¹、N. Kojima¹、Y. Ohshita¹、M. Yamaguchi¹ (1.Toyota Technological Inst. , Japan)

https://doi.org/10.7567/SSDM.2012.H-1-1