Development of Cu/insulation layer interface crack extension simulation with single crystal plasticity

K. Koiwa; M. Omiya; N. Shishido; S. Kamiya; H. Sato; M. Nishida; T. Suzuki; T. Nakamura; T. Nokuo

doi:https://doi.org/10.7567/SSDM.2012.H-6-6L

[H-6-6L] Development of Cu/insulation layer interface crack extension simulation with single crystal plasticity

K. Koiwa^1,2, M. Omiya^2,3, N. Shishido^1,2, S. Kamiya^1,2, H. Sato^1,2, M. Nishida^1,2, T. Suzuki^2,5, T. Nakamura⁴, T. Nokuo^2,5 (1.Nagoya Inst. of Tech., 2.Japan Sci. and Tech. Agency, 3.Keio Univ., 4.Fujitsu labs. Ltd., 5.JEOL Ltd. , Japan)

https://doi.org/10.7567/SSDM.2012.H-6-6L

2012 International Conference on Solid State Devices and Materials

[H-6-6L] Development of Cu/insulation layer interface crack extension simulation with single crystal plasticity