[H-6-6L] Development of Cu/insulation layer interface crack extension simulation with single crystal plasticity

K. Koiwa^1,2、M. Omiya^2,3、N. Shishido^1,2、S. Kamiya^1,2、H. Sato^1,2、M. Nishida^1,2、T. Suzuki^2,5、T. Nakamura⁴、T. Nokuo^2,5 (1.Nagoya Inst. of Tech.、2.Japan Sci. and Tech. Agency、3.Keio Univ.、4.Fujitsu labs. Ltd.、5.JEOL Ltd. , Japan)

https://doi.org/10.7567/SSDM.2012.H-6-6L