Nano-Patterned Sapphire Substrates-Induced Strain-Related Quantum-Confined-Stark-Effect Behaviors of InGaN-Based Light-Emitting Diodes

V. C. Su; Y. J. Chen; M. L. Lee; Y. H. You; C. H. Kuan; P. H. Chen; C. J. Hsieh; R. M. Lin; S. F. Yu

doi:https://doi.org/10.7567/SSDM.2012.I-1-5

2012 International Conference on Solid State Devices and Materials

2012年9月25日〜 2012年9月27日
Kyoto International Conference Center, Kyoto, Japan

[I-1-5] Nano-Patterned Sapphire Substrates-Induced Strain-Related Quantum-Confined-Stark-Effect Behaviors of InGaN-Based Light-Emitting Diodes

V. C. Su¹、Y. J. Chen¹、M. L. Lee¹、Y. H. You¹、C. H. Kuan¹、P. H. Chen¹、C. J. Hsieh¹、R. M. Lin²、S. F. Yu² (1.National Taiwan Univ.、2.Chang Gung Univ. , Taiwan)

https://doi.org/10.7567/SSDM.2012.I-1-5

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