The Japan Society of Applied Physics

[I-2-1] Increase of Si0.5Ge0.5 Bulk Single Crystal Size as Substrates for Strained Ge Epitaxial Layers

K. Kinoshita1, O. Nakatsuka2, Y. Arai1, K. Taguchi3, H. Tomioka3, R. Tanaka3, S. Yoda1 (1.JAXA, 2.Nagoya Univ., 3.AES Co. Ltd. , Japan)

https://doi.org/10.7567/SSDM.2012.I-2-1