[I-2-1] Increase of Si0.5Ge0.5 Bulk Single Crystal Size as Substrates for Strained Ge Epitaxial Layers

K. Kinoshita¹, O. Nakatsuka², Y. Arai¹, K. Taguchi³, H. Tomioka³, R. Tanaka³, S. Yoda¹ (1.JAXA, 2.Nagoya Univ., 3.AES Co. Ltd. , Japan)

https://doi.org/10.7567/SSDM.2012.I-2-1