[I-2-1] Increase of Si0.5Ge0.5 Bulk Single Crystal Size as Substrates for Strained Ge Epitaxial Layers

K. Kinoshita¹、O. Nakatsuka²、Y. Arai¹、K. Taguchi³、H. Tomioka³、R. Tanaka³、S. Yoda¹ (1.JAXA、2.Nagoya Univ.、3.AES Co. Ltd. , Japan)

https://doi.org/10.7567/SSDM.2012.I-2-1