[I-2-2] Impact of Sn corporation on Epitaxial Growth of Ge Layers on Si(110) Substrates

S. Kidowaki¹、T. Asano¹、Y. Shimura¹、N. Taoka¹、O. Nakatsuka¹、S. Zaima¹ (1.Graduate School of Eng., Nagoya Univ. , Japan)

https://doi.org/10.7567/SSDM.2012.I-2-2