[K-3-4] Impact of Al and Cu electrodes on GeOx/W for high-performance crossbar resistive switching memories

S. Z. Rahaman¹、S. Maikap¹、C. S. Lai¹、H. Y. Lee²、W. S. Chen²、F. Chen²、M. J. Tsai² (1.Chang Gung Uinv.、2.Indus. Techn. Res. Inst. , Taiwan)

https://doi.org/10.7567/SSDM.2012.K-3-4