The Japan Society of Applied Physics

[K-3-4] Impact of Al and Cu electrodes on GeOx/W for high-performance crossbar resistive switching memories

S. Z. Rahaman1, S. Maikap1, C. S. Lai1, H. Y. Lee2, W. S. Chen2, F. Chen2, M. J. Tsai2 (1.Chang Gung Uinv., 2.Indus. Techn. Res. Inst. , Taiwan)

https://doi.org/10.7567/SSDM.2012.K-3-4