[K-3-4] Impact of Al and Cu electrodes on GeOx/W for high-performance crossbar resistive switching memories

S. Z. Rahaman¹, S. Maikap¹, C. S. Lai¹, H. Y. Lee², W. S. Chen², F. Chen², M. J. Tsai² (1.Chang Gung Uinv., 2.Indus. Techn. Res. Inst. , Taiwan)

https://doi.org/10.7567/SSDM.2012.K-3-4