[K-9-4] Tunnel barrier thickness dependence of Hanle-type signals in CoFe/MgO/n-Si and CoFe/MgO/n-Ge junctions investigated through three-terminal configuration
T. Uemura1、G. F. Li1、J. Fujisawa1、K. Kondo1、K. Matsuda1、M. Yamamoto1
(1.Hokkaido Univ. , Japan)
https://doi.org/10.7567/SSDM.2012.K-9-4