Asymmetric bias voltage dependence in spin accumulation signals observed by the three-terminal Hanle measurements for CoFe/crystalline MgO/SOI devices

M. Ishikawa; H. Sugiyama; T. Inokuchi; T. Tanamoto; K. Hamaya; N. Tezuka; Y. Saito

doi:https://doi.org/10.7567/SSDM.2012.K-9-6

[K-9-6] Asymmetric bias voltage dependence in spin accumulation signals observed by the three-terminal Hanle measurements for CoFe/crystalline MgO/SOI devices

M. Ishikawa¹, H. Sugiyama¹, T. Inokuchi¹, T. Tanamoto¹, K. Hamaya², N. Tezuka³, Y. Saito¹ (1.Corporate R&D Center, Toshiba Corp., 2.Kyushu Univ., 3.Tohoku Univ. , Japan)

https://doi.org/10.7567/SSDM.2012.K-9-6

2012 International Conference on Solid State Devices and Materials

[K-9-6] Asymmetric bias voltage dependence in spin accumulation signals observed by the three-terminal Hanle measurements for CoFe/crystalline MgO/SOI devices