Super Junction Power MOSFET by Multi step Trench Process

J. M. Wang; K. Y. Tai; L. C. Wang; C. H. Huang; C. Lin; C. J. Lin; Y. C. King

doi:https://doi.org/10.7567/SSDM.2012.L-1-6

2012 International Conference on Solid State Devices and Materials

2012年9月25日〜 2012年9月27日
Kyoto International Conference Center, Kyoto, Japan

[L-1-6] Super Junction Power MOSFET by Multi step Trench Process

J. M. Wang¹、K. Y. Tai¹、L. C. Wang¹、C. H. Huang²、C. Lin²、C. J. Lin¹、Y. C. King¹ (1.National Tsing-Hua Univ.、2.Taiwan Semiconductors Company Ltd. , Taiwan)

https://doi.org/10.7567/SSDM.2012.L-1-6

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