Super Junction Power MOSFET by Multi step Trench Process

J. M. Wang; K. Y. Tai; L. C. Wang; C. H. Huang; C. Lin; C. J. Lin; Y. C. King

doi:https://doi.org/10.7567/SSDM.2012.L-1-6

2012 International Conference on Solid State Devices and Materials

Sep 25, 2012 - Sep 27, 2012
Kyoto International Conference Center, Kyoto, Japan

[L-1-6] Super Junction Power MOSFET by Multi step Trench Process

J. M. Wang¹, K. Y. Tai¹, L. C. Wang¹, C. H. Huang², C. Lin², C. J. Lin¹, Y. C. King¹ (1.National Tsing-Hua Univ., 2.Taiwan Semiconductors Company Ltd. , Taiwan)

https://doi.org/10.7567/SSDM.2012.L-1-6

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