[L-2-5] Phosphorus Doping of 4H-SiC by KrF Excimer Laser Irradiation in Phosphoric Solution

A. Ikeda¹、K. Nishi¹、H. Ikenoue¹、T. Asano¹ (1.Kyushu Univ. , Japan)

https://doi.org/10.7567/SSDM.2012.L-2-5