[L-2-6] Leakage Current Suppression Using Passivation of Defect by Anodic Oxidation for 4H-SiC Schottky Contacts

M. Kato¹、M. Kimura¹、M. Ichimura¹ (1.Nagoya Inst. of Tech. , Japan)

https://doi.org/10.7567/SSDM.2012.L-2-6