The Japan Society of Applied Physics

[L-3-2] Diamond Lateral p-n Diodes and JFETs by Selective Growth of n+Diamond

Y. Hoshino1、T. Iwasaki1,2,3、K. Tsuzuki1、H. Kato2,4、T. Makino2,4、M. Ogura2,4、D. Takeuchi2,4、T. Matsumoto2,4、S. Yamasaki2,4、M. Hatano1,2,3 (1.Tokyo Tech.、2.JST-CREST、3.JST-ALCA、4.AIST , Japan)

https://doi.org/10.7567/SSDM.2012.L-3-2