The Japan Society of Applied Physics

[L-3-2] Diamond Lateral p-n Diodes and JFETs by Selective Growth of n+Diamond

Y. Hoshino1, T. Iwasaki1,2,3, K. Tsuzuki1, H. Kato2,4, T. Makino2,4, M. Ogura2,4, D. Takeuchi2,4, T. Matsumoto2,4, S. Yamasaki2,4, M. Hatano1,2,3 (1.Tokyo Tech., 2.JST-CREST, 3.JST-ALCA, 4.AIST , Japan)

https://doi.org/10.7567/SSDM.2012.L-3-2