[L-3-3] Thermally Stable Operation of Diamond Field-Effect Transistors by NO₂ Adsorption and Al₂O₃ Passivation

K. Hirama¹、H. Sato¹、Y. Harada¹、H. Yamamoto¹、M. Kasu^1,2 (1.NTT Basic Res. Labs.、2.Saga Univ. , Japan)

https://doi.org/10.7567/SSDM.2012.L-3-3