[M-5-4L] The Influence of Gate Insulator Dipoles on Charge Transport in Solution-Processed Top-Gate Organic Field-Effect Transistors with High Mobility and Operational Stability

K. Takagi¹、T. Nagase^1,2、T. Kobayashi^1,2、H. Naito^1,2 (1.Osaka Prefecture Univ.、2.The Research Inst. for Molecular Electronic Devices (RIMED) , Japan)

https://doi.org/10.7567/SSDM.2012.M-5-4L