[PS-1-1] Interface Stabilizing and EOT Scaling of Al2O3 /Ge Gate Stack with Ozone Post-Oxidation without Additional Interface Layer Formation

J. Sun^1,2、Y. Geng²、H. Lu²、W. Wu¹、X. Ye¹、Z. Yang¹、Y. Zhao¹、Y. Shi¹ (1.Univ. of Nanjing、2.Univ. of Fudan , China)

https://doi.org/10.7567/SSDM.2012.PS-1-1