[PS-1-1] Interface Stabilizing and EOT Scaling of Al2O3 /Ge Gate Stack with Ozone Post-Oxidation without Additional Interface Layer Formation

J. Sun^1,2, Y. Geng², H. Lu², W. Wu¹, X. Ye¹, Z. Yang¹, Y. Zhao¹, Y. Shi¹ (1.Univ. of Nanjing, 2.Univ. of Fudan , China)

https://doi.org/10.7567/SSDM.2012.PS-1-1