[PS-1-16] Characterization of As Implanted and Annealed Ge by Photoemission and Electrical Measurements

T. Ono¹、A. Ohta¹、H. Murakami¹、S. Higashi¹、S. Miyazaki² (1.Hiroshima Univ.、2.Nagoya Univ. , Japan)

https://doi.org/10.7567/SSDM.2012.PS-1-16