Growth of Epitaxial Beryllium Oxide on Ge (111) by Molecular Beam Epitaxy

S. K. Wang; B. Xue; H. Liang; Z. Mei; Y. Li; W. Zhao; B. Sun; X. Du; H. G. Liu

doi:https://doi.org/10.7567/SSDM.2012.PS-1-4

2012 International Conference on Solid State Devices and Materials

Sep 25, 2012 - Sep 27, 2012
Kyoto International Conference Center, Kyoto, Japan

[PS-1-4] Growth of Epitaxial Beryllium Oxide on Ge (111) by Molecular Beam Epitaxy

S. K. Wang¹, B. Xue¹, H. Liang², Z. Mei², Y. Li¹, W. Zhao¹, B. Sun¹, X. Du², H. G. Liu¹ (1.Inst. of Microelectronics, Chinese Academy of Sci., 2.Inst. of Physics, Chinese Academy of Sci. , CHINA)

https://doi.org/10.7567/SSDM.2012.PS-1-4

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