[PS-1-7] Laterally Graded SiGe-on-Insulator with Universal Si Profile by Cooling-Rate-Controlled Rapid-Melting-Growth

R. Matsumura¹、Y. Tojo¹、H. Yokoyama¹、M. Kurosawa¹、T. Sadoh¹、M. Miyao¹ (1.Kyushu Univ. , Japan)

https://doi.org/10.7567/SSDM.2012.PS-1-7