[PS-1-7] Laterally Graded SiGe-on-Insulator with Universal Si Profile by Cooling-Rate-Controlled Rapid-Melting-Growth
R. Matsumura1, Y. Tojo1, H. Yokoyama1, M. Kurosawa1, T. Sadoh1, M. Miyao1
(1.Kyushu Univ. , Japan)
https://doi.org/10.7567/SSDM.2012.PS-1-7
