The Japan Society of Applied Physics

[PS-1-8] Enhanced Carrier Activation by B and Sb/P Doping for Ge CMOSFET

T. Ueno1, H. Miyoshi1, Y. Hirota1, J. Yamanaka2, K. Arimoto2, K. Nakagawa2, Y. Yusuke3, Y. Shiraki3, T. Kaitsuka1 (1.Tokyo Electron Ltd., 2.Univ. of Yamanashi, 3.Tokyo City Univ. , Japan)

https://doi.org/10.7567/SSDM.2012.PS-1-8