Enhanced Carrier Activation by B and Sb/P Doping for Ge CMOSFET

T. Ueno; H. Miyoshi; Y. Hirota; J. Yamanaka; K. Arimoto; K. Nakagawa; Y. Yusuke; Y. Shiraki; T. Kaitsuka

doi:https://doi.org/10.7567/SSDM.2012.PS-1-8

2012 International Conference on Solid State Devices and Materials

Sep 25, 2012 - Sep 27, 2012
Kyoto International Conference Center, Kyoto, Japan

[PS-1-8] Enhanced Carrier Activation by B and Sb/P Doping for Ge CMOSFET

T. Ueno¹, H. Miyoshi¹, Y. Hirota¹, J. Yamanaka², K. Arimoto², K. Nakagawa², Y. Yusuke³, Y. Shiraki³, T. Kaitsuka¹ (1.Tokyo Electron Ltd., 2.Univ. of Yamanashi, 3.Tokyo City Univ. , Japan)

https://doi.org/10.7567/SSDM.2012.PS-1-8

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