Enhanced Carrier Activation by B and Sb/P Doping for Ge CMOSFET

T. Ueno; H. Miyoshi; Y. Hirota; J. Yamanaka; K. Arimoto; K. Nakagawa; Y. Yusuke; Y. Shiraki; T. Kaitsuka

doi:https://doi.org/10.7567/SSDM.2012.PS-1-8

2012 International Conference on Solid State Devices and Materials

2012年9月25日〜 2012年9月27日
Kyoto International Conference Center, Kyoto, Japan

[PS-1-8] Enhanced Carrier Activation by B and Sb/P Doping for Ge CMOSFET

T. Ueno¹、H. Miyoshi¹、Y. Hirota¹、J. Yamanaka²、K. Arimoto²、K. Nakagawa²、Y. Yusuke³、Y. Shiraki³、T. Kaitsuka¹ (1.Tokyo Electron Ltd.、2.Univ. of Yamanashi、3.Tokyo City Univ. , Japan)

https://doi.org/10.7567/SSDM.2012.PS-1-8

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