[PS-11-11] Hydrogen Ion Sensing Properties of Niobium Oxide by RTA and Thickness effect

T. W. Chiang¹, Y. T. Lin¹, M. Y. Shin¹, T. W. Juan¹, T. C. Chen¹, C .H. Lue⁴, C. S. Lai^1,2,3, C. M. Yang^1,2,4 (1.Department of Electronic Engineering, Chang Gung Univ., 2.Healthy Aging Research Center, Chang Gung Univ., 3.Center for Biomedical Engineering, Chang Gung Univ., 4.Department of Device Engineering, Inotera Memories Inc. , R.O.C. Taiwan)

https://doi.org/10.7567/SSDM.2012.PS-11-11