[PS-11-11] Hydrogen Ion Sensing Properties of Niobium Oxide by RTA and Thickness effect

T. W. Chiang¹、Y. T. Lin¹、M. Y. Shin¹、T. W. Juan¹、T. C. Chen¹、C .H. Lue⁴、C. S. Lai^1,2,3、C. M. Yang^1,2,4 (1.Department of Electronic Engineering, Chang Gung Univ.、2.Healthy Aging Research Center, Chang Gung Univ.、3.Center for Biomedical Engineering, Chang Gung Univ.、4.Department of Device Engineering, Inotera Memories Inc. , R.O.C. Taiwan)

https://doi.org/10.7567/SSDM.2012.PS-11-11