Gate Controlled Ionic Transport Nanofluidic Channel Fabricated by Silicon Planer Process

K. Takahashi; J. Nishimoto; Y. Uemura; K. Atsumi; T. Hattori; M. Futagawa; K. Okumura; M. Ishida; K. Sawada

doi:https://doi.org/10.7567/SSDM.2012.PS-11-16L

2012 International Conference on Solid State Devices and Materials

Sep 25, 2012 - Sep 27, 2012
Kyoto International Conference Center, Kyoto, Japan

[PS-11-16L] Gate Controlled Ionic Transport Nanofluidic Channel Fabricated by Silicon Planer Process

K. Takahashi¹, J. Nishimoto¹, Y. Uemura¹, K. Atsumi¹, T. Hattori¹, M. Futagawa¹, K. Okumura¹, M. Ishida¹, K. Sawada¹ (1.Toyohashi Univ. Tech. , Japan)

https://doi.org/10.7567/SSDM.2012.PS-11-16L

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