[PS-11-7] High Performance Amorphous InGaZnO Based Dual-Gate Ion-Sensitive Field-Effect Transistors

J. G. Gu¹, H. J. Jang¹, S. W. Lee¹, W. J. Cho¹ (1.Kwangwoon Univ. of Seoul , korea)

https://doi.org/10.7567/SSDM.2012.PS-11-7