[PS-11-7] High Performance Amorphous InGaZnO Based Dual-Gate Ion-Sensitive Field-Effect Transistors

J. G. Gu¹、H. J. Jang¹、S. W. Lee¹、W. J. Cho¹ (1.Kwangwoon Univ. of Seoul , korea)

https://doi.org/10.7567/SSDM.2012.PS-11-7