[PS-12-4] 210-ns-long spin relaxation of heavily Si-doped GaInP lattice-matched to Ge substrates

T. Ishizuka¹, T. Ushimi¹, H. Nakata¹, S. L. Lu², J. R. Dong², A. Tackeuchi¹ (1.Waseda Univ. , Japan, 2.SINANO-CAS , China)

https://doi.org/10.7567/SSDM.2012.PS-12-4