Influence of stacking faults and surface morphology in triangular defects on 4H-SiC junction barrier Schottky diodes

K. Konishi; S. Nakata; Y. Nakaki; Y. Nakao; A. Nagae; T. Tanaka; Y. Toyoda; H. Sumitani; T. Oomori

doi:https://doi.org/10.7567/SSDM.2012.PS-14-6

[PS-14-6] Influence of stacking faults and surface morphology in triangular defects on 4H-SiC junction barrier Schottky diodes

K. Konishi¹、S. Nakata¹、Y. Nakaki¹、Y. Nakao¹、A. Nagae¹、T. Tanaka¹、Y. Toyoda¹、H. Sumitani²、T. Oomori² (1.Advanced Tech. R&D Center, Mitsubishi Electric Corporation,、2.Power Device Works, Mitsubishi Electric Corporation, , Japan)

https://doi.org/10.7567/SSDM.2012.PS-14-6

2012 International Conference on Solid State Devices and Materials

[PS-14-6] Influence of stacking faults and surface morphology in triangular defects on 4H-SiC junction barrier Schottky diodes