Influence of stacking faults and surface morphology in triangular defects on 4H-SiC junction barrier Schottky diodes

K. Konishi; S. Nakata; Y. Nakaki; Y. Nakao; A. Nagae; T. Tanaka; Y. Toyoda; H. Sumitani; T. Oomori

doi:https://doi.org/10.7567/SSDM.2012.PS-14-6

[PS-14-6] Influence of stacking faults and surface morphology in triangular defects on 4H-SiC junction barrier Schottky diodes

K. Konishi¹, S. Nakata¹, Y. Nakaki¹, Y. Nakao¹, A. Nagae¹, T. Tanaka¹, Y. Toyoda¹, H. Sumitani², T. Oomori² (1.Advanced Tech. R&D Center, Mitsubishi Electric Corporation,, 2.Power Device Works, Mitsubishi Electric Corporation, , Japan)

https://doi.org/10.7567/SSDM.2012.PS-14-6

2012 International Conference on Solid State Devices and Materials

[PS-14-6] Influence of stacking faults and surface morphology in triangular defects on 4H-SiC junction barrier Schottky diodes