A 0.25um High Voltage LDMOSFET for RF Applications and High-frequency Parameter Extraction

C. Y. Hung; K. H. Lo; C. M. Hu; C. H. Chu; D. C. Chang; J. Gong; C. F. Huang

doi:https://doi.org/10.7567/SSDM.2012.PS-14-8

2012 International Conference on Solid State Devices and Materials

2012年9月25日〜 2012年9月27日
Kyoto International Conference Center, Kyoto, Japan

[PS-14-8] A 0.25um High Voltage LDMOSFET for RF Applications and High-frequency Parameter Extraction

C. Y. Hung¹、K. H. Lo¹、C. M. Hu²、C. H. Chu²、D. C. Chang³、J. Gong⁴、C. F. Huang¹ (1.National Tsing Hua Univ.、2.TPK Touch solutions Inc.、3.National Chip Implementation Center、4.Tung Hai Univ. , Taiwan)

https://doi.org/10.7567/SSDM.2012.PS-14-8

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